My Work.
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My Journal Papers
1. Xu Jing, Yury Illarionovv, Eilam Yalon, Peng Zhou, Tibor Grasser, Yuanyuan Shi, Mario Lanza*, “Engineering field effect transistors with two-dimensional semiconducting channels: status and prospects”, Advanced Functional Materials, 1901971, 2019.
2. Xu Jing, Emanuel Panholzer, Xiaoxue Song, Enric Grustan-Gutierrez, Fei Hui, Yuanyuan Shi, Guenther Benstetter, Yury Illarionov, Tibor Grasser and Mario Lanza*, “Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets”, Nano Energy, 30, 494–502, 2016.
3. Xu Jing, Francesco Maria Puglisi, Deji Akinwande and Mario Lanza*, “Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices”, 2D Materials, 6, 035021, 2019.
4. Chao Wen, Xu Jing, Frank F. Hitzel, Chengbin Pan, Günther Benstetter, Mario Lanza*,”In situ observation of current generation in ZnO nanowire based nanogenerators using a CAFM integrated into an SEM”, ACS Applied Materials & Interfaces, 11(17), 15183-15188, 2019.
5. Shaochuan Chen, Lanlan Jiang, Mark Buckwell, Xu Jing, Yanfeng Ji, Enric Grustan-Gutierrez, Fei Hui, Yuanyuan Shi, Mathias Rommel, Albena Paskaleva, Guenther Benstetter, Wing H. Ng, Adnan Mehonic, Anthony J. Kenyon and Mario Lanza* , “On the limits of Scalpel AFM for the 3D electrical characterization of nanomaterials”, Advanced Functional Materials, 1802266, 2018.
6. Ying Zuo, Huizi Lin, Jingchun Guo, Yue Yuan, Hanglin He, Yutong Li, Yiping Xiao, Xuehua Li, Kaichen Zhu, Tao Wang, Xu Jing, Chao Wen, Mario Lanza*, “Effect of the Pressure Exerted by Probe Station Tips in the Electrical Characteristics of Memristors”, Advanced Electronic Materials, 1901226, 2020.
7. Tao Wang, Yuanyuan Shi, Francesco Maria Puglisi, Shaochuan Chen, Kaichen Zhu, Ying Zuo, Xuahua Li, Xu Jing, Tingting Han, Biyu Guo, Kristýna Bukvišová, Lukáš Kachtík, Miroslav Kolíbal, Chao Wen, Mario Lanza*, “Electroforming in Metal-Oxide Memristive Synapses”, ACS Applied Materials & Interfaces, 2020.
8. Marco A. Villena*, Fei Hui, Xianhu Liang, Yuanyuan Shi, Bin Yuan, Xu Jing, Kaichen Zhu, Shaochuan Chen, Mario Lanza*, “Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials”, Microelectronics Reliability, 102, 113410, 2019.
9. Mario Lanza*, H.-S. Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, J. Joshua Yang, Ludovic Goux, Attilio Belmonte, Yuchao Yang, Francesco M. Puglisi, Jinfeng Kang, Blanka Magyari-Köpe, Eilam Yalon, Anthony Kenyon, Mark Buckwell, Adnan Mehonic, Alexander Shluger, Haitong Li, Tuo-Hung Hou, Boris Hudec, Deji Akinwande, Ruijing Ge, Stefano Ambrogio, Juan B. Roldan, Enrique Miranda, Jordi Suñe, Kin Leong Pey, Xing Wu, Nagarajan Raghavan, Ernest Wu, Wei D. Lu, Gabriele Navarro, Weidong Zhang, Huaqiang Wu, Runwei Li, Alexander Holleitner, Ursula Wurstbauer, Max C. Lemme, Ming Liu, Shibing Long, Qi Liu, Hangbing Lv, Andrea Padovani, Paolo Pavan, Ilia Valov, Xu Jing, Tingting Han, Kaichen Zhu, Shaochuan Chen, Fei Hui, and Yuanyuan Shi, “Recommended Methods to Study Resistive Switching Devices”, Advanced Electronic Materials, 1800143, 2018.
10. Fei Hui, Marco A Villena, Wenjing Fang, Ang-Yu Lu, Jing Kong, Yuanyuan Shi, Xu Jing, Kaichen Zhu and Mario Lanza*,”Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices“, 2D Materials, 5, 031011, 2018.
11. Bingru Wang, Na Xiao, Chengbin Pan, Yuanyuan Shi, Fei Hui, Xu Jing, Kaichen Zhu, Biyu Guo, Marco A. Villena, Enrique Miranda, Mario Lanza*, “Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices”, Crystal Research and Technology, 53, 1800006, 2018.
12. Lanlan Jiang, Yuanyuan Shi, Fei Hui, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan J Uppal, Felix Roberto Mario Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A Villena, Xiaoming Xie, Paul C McIntyre, Mario Lanza*, "Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride", ACS Appl. Mater. Interfaces, 9(45), 39758–39770, 2017.
13. Fei Hui, Shaochuan Chen, Xianhu Liang, Bin Yuan, Xu Jing, Yuanyuan Shi, Mario Lanza*, "Graphene coated nanoprobes: A review", Crystals, 7(9), 269, 2017.
14. Xiaoxue Song, Fei Hui, Theresia Knobloch, Bingru Wang, Zhongchao Fan, Tibor Grasser, Xu Jing, Yuanyuan Shi, Mario Lanza*, "Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide", Applied Physics Letters, 8, 083107, 2017.
15. Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuerman, Kechao Tang, Paul C. McIntyre and Mario Lanza*, “Resistive random access memory cells with a bilayer TiO2/SiOX insulating stack for simultaneous filamentary and distributed resistive switching”, Advanced Functional Materials, 1700384, 2017.
16. Chengbin Pan, Enrique Miranda, Marco A Villena, Na Xiao, Xu Jing, Xiaoming Xie, Tianru Wu, Fei Hui, Yuanyuan Shi, and Mario Lanza*, “Model for multi-filamentary conduction in graphene/hexagonalboron-nitride/graphene based resistive switching devices”, 2D Materials, 4, 2, 2017.
17. Lanlan Jiang, Na Xiao, Bingru Wang, Enric Grustan-Gutierrez, Xu Jing, Petr Babor, Miroslav Kolíbal, Guangyuan Lu, Tianru Wu, Haomin Wang, Fei Hui, Yuanyuan Shi, Bo Song, Xiaoming Xie, Mario Lanza*, “High resolution characterization of Hexagonal Boron Nitride Coatings exposed to aqueous and air oxidative environments”, Nano Research, 10(6): 2046–2055, 2017.
5. Shaochuan Chen, Lanlan Jiang, Mark Buckwell, Xu Jing, Yanfeng Ji, Enric Grustan-Gutierrez, Fei Hui, Yuanyuan Shi, Mathias Rommel, Albena Paskaleva, Guenther Benstetter, Wing H. Ng, Adnan Mehonic, Anthony J. Kenyon and Mario Lanza* , “On the limits of Scalpel AFM for the 3D electrical characterization of nanomaterials”, Advanced Functional Materials, 1802266, 2018.
6. Ying Zuo, Huizi Lin, Jingchun Guo, Yue Yuan, Hanglin He, Yutong Li, Yiping Xiao, Xuehua Li, Kaichen Zhu, Tao Wang, Xu Jing, Chao Wen, Mario Lanza*, “Effect of the Pressure Exerted by Probe Station Tips in the Electrical Characteristics of Memristors”, Advanced Electronic Materials, 1901226, 2020.
7. Tao Wang, Yuanyuan Shi, Francesco Maria Puglisi, Shaochuan Chen, Kaichen Zhu, Ying Zuo, Xuahua Li, Xu Jing, Tingting Han, Biyu Guo, Kristýna Bukvišová, Lukáš Kachtík, Miroslav Kolíbal, Chao Wen, Mario Lanza*, “Electroforming in Metal-Oxide Memristive Synapses”, ACS Applied Materials & Interfaces, 2020.
8. Marco A. Villena*, Fei Hui, Xianhu Liang, Yuanyuan Shi, Bin Yuan, Xu Jing, Kaichen Zhu, Shaochuan Chen, Mario Lanza*, “Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials”, Microelectronics Reliability, 102, 113410, 2019.
9. Mario Lanza*, H.-S. Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, J. Joshua Yang, Ludovic Goux, Attilio Belmonte, Yuchao Yang, Francesco M. Puglisi, Jinfeng Kang, Blanka Magyari-Köpe, Eilam Yalon, Anthony Kenyon, Mark Buckwell, Adnan Mehonic, Alexander Shluger, Haitong Li, Tuo-Hung Hou, Boris Hudec, Deji Akinwande, Ruijing Ge, Stefano Ambrogio, Juan B. Roldan, Enrique Miranda, Jordi Suñe, Kin Leong Pey, Xing Wu, Nagarajan Raghavan, Ernest Wu, Wei D. Lu, Gabriele Navarro, Weidong Zhang, Huaqiang Wu, Runwei Li, Alexander Holleitner, Ursula Wurstbauer, Max C. Lemme, Ming Liu, Shibing Long, Qi Liu, Hangbing Lv, Andrea Padovani, Paolo Pavan, Ilia Valov, Xu Jing, Tingting Han, Kaichen Zhu, Shaochuan Chen, Fei Hui, and Yuanyuan Shi, “Recommended Methods to Study Resistive Switching Devices”, Advanced Electronic Materials, 1800143, 2018.
10. Fei Hui, Marco A Villena, Wenjing Fang, Ang-Yu Lu, Jing Kong, Yuanyuan Shi, Xu Jing, Kaichen Zhu and Mario Lanza*,”Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices“, 2D Materials, 5, 031011, 2018.
11. Bingru Wang, Na Xiao, Chengbin Pan, Yuanyuan Shi, Fei Hui, Xu Jing, Kaichen Zhu, Biyu Guo, Marco A. Villena, Enrique Miranda, Mario Lanza*, “Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices”, Crystal Research and Technology, 53, 1800006, 2018.
12. Lanlan Jiang, Yuanyuan Shi, Fei Hui, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan J Uppal, Felix Roberto Mario Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A Villena, Xiaoming Xie, Paul C McIntyre, Mario Lanza*, "Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride", ACS Appl. Mater. Interfaces, 9(45), 39758–39770, 2017.
13. Fei Hui, Shaochuan Chen, Xianhu Liang, Bin Yuan, Xu Jing, Yuanyuan Shi, Mario Lanza*, "Graphene coated nanoprobes: A review", Crystals, 7(9), 269, 2017.
14. Xiaoxue Song, Fei Hui, Theresia Knobloch, Bingru Wang, Zhongchao Fan, Tibor Grasser, Xu Jing, Yuanyuan Shi, Mario Lanza*, "Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide", Applied Physics Letters, 8, 083107, 2017.
15. Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuerman, Kechao Tang, Paul C. McIntyre and Mario Lanza*, “Resistive random access memory cells with a bilayer TiO2/SiOX insulating stack for simultaneous filamentary and distributed resistive switching”, Advanced Functional Materials, 1700384, 2017.
16. Chengbin Pan, Enrique Miranda, Marco A Villena, Na Xiao, Xu Jing, Xiaoming Xie, Tianru Wu, Fei Hui, Yuanyuan Shi, and Mario Lanza*, “Model for multi-filamentary conduction in graphene/hexagonalboron-nitride/graphene based resistive switching devices”, 2D Materials, 4, 2, 2017.
17. Lanlan Jiang, Na Xiao, Bingru Wang, Enric Grustan-Gutierrez, Xu Jing, Petr Babor, Miroslav Kolíbal, Guangyuan Lu, Tianru Wu, Haomin Wang, Fei Hui, Yuanyuan Shi, Bo Song, Xiaoming Xie, Mario Lanza*, “High resolution characterization of Hexagonal Boron Nitride Coatings exposed to aqueous and air oxidative environments”, Nano Research, 10(6): 2046–2055, 2017.
Conference Paper with DOI
1. Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo. “Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity", Reliability Physics Symposium (IRPS), 2018 IEEE International. IEEE, 2018: P-GD. 6-1-P-GD. 6-4.
The chapter I help to edit
2. Fei Hui, Shaochuan Chen, Xianhu Liang, Bin Yuan, Xu Jing, Yuanyuan Shi, Mario Lanza, Graphene Coated Nanoprobes: A Review, Chapter in Integration of 2D materials for Electronics Applications, MDPI book - Crystals special issue, ISBN: 978-3-03897-607-3, pp.144-164, 2019.
1. Iglesias Vanessa, Xu Jing, and Mario Lanza. "Combination of Semiconductor Parameter Analyzer and Conductive Atomic Force Microscope for Advanced Nanoelectronic Characterization." Conductive Atomic Force Microscopy: Applications in Nanomaterials, 2017, Aug, 7.
My presentation and talk
1. Xu Jing, Emannuel Panholzer, Xiaoxue Song, Fei Hui, Mario Lanza*, “Scalable MoS2 phototransistors with ultra low power consumption and high light/dark current ratios” Graphene Malaysia 2016, Nov. 8th –Nov. 9th 2016, Kuala Lumpur, Malaysia.
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Conference I help to organize
1. Xu Jing, Mario Lanza*, 1st China RRAM (China RRAM 2017), Jun. 12th - Jun. 14th 2017, Suzhou, China.
My Conference Participations
8. Xu Jing, Mario Lanza*, the 5th International Conference on 2D Materials and Technology, October 21st-24th 2019, Suzhou, China.
7. Xu Jing, Mario Lanza*, The 26th edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2019), July 2nd-5th, Hangzhou, China.
6. Xu Jing, Mario Lanza*, 2018 International Workshop on Future Computing: Devices and Systems for Neuromorphic Computing (IWOFC2018), Dec. 17th - Dec. 18th 2018, Shenzhen, China.
5. Xu Jing, Mario Lanza*, 10th annual Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR2018), Oct. 22nd - Oct. 25th 2018, Guilin, China.
4. Xu Jing, Mario Lanza*, XXVI International Material Research Congress, Aug. 20th - Aug. 25th 2017, Cancun, Mexico.
3. Xu Jing, International Thin-Film Transistor Conference, Feb. 23rd - Feb. 24th 2017, Austin, Texas, United states.
2. Xu Jing, Mario Lanza*, Graphene Malaysia 2016, Nov. 8th - Nov. 9th 2016, Kuala Lumpur, Malaysia.
1. Xu Jing, Mario Lanza*, 2016 International Graphene Innovation Conference, Sept. 22nd - Sept. 24th 2016, Qingdao, China.